cmos linear image sensor small, resin-sealed cmos image sensor www.hamamatsu.com s10226-10 1 absolute maximum ratings structure parameter symbol condition value unit supply voltage vdd ta=25 c -0.3 to +6 v gain selection terminal voltage vg ta=25 c -0.3 to +6 v clock pulse voltage v(clk) ta=25 c -0.3 to +6 v start pulse voltage v(st) ta=25 c -0.3 to +6 v operating temperature * 1 topr -25 to +85 c storage temperature * 1 tstg -25 to +85 c re ow soldering conditions * 2 tsol peak temperature 260 c, 3 times (see p.7) - * 1: no condensation * 2: jedec level 2a note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. parameter speci cation unit number of pixels 1024 - pixel pitch 7.8 m pixel height 125 m photosensitive area length 7.9872 mm package glass epoxy - seal material silicone resin - the s10226-10 is a resin-sealed cmos linear image sensor to offer compact size and high cost-performance compared to our previous product (s9226 series). compact and high cost-performance surface mount type package: 2.4 9.1 1.6 t mm pixel pitch: 7.8 m pixel height: 125 m 1024 pixels single 3.3 v power supply operation spectral response range: 400 to 1000 nm video data rate: 200 khz max. built-in timing generator allows operation with only start and clock pulse inputs. high sensitivity, low dark current, low noise on-chip charge ampli er with excellent input/output characteristics features barcode readers displacement meters refractometers interferometers miniature spectrometers applications
cmos linear image sensor s10226-10 2 parameter symbol min. typ. max. unit supply voltage vdd 3.3 5 5.25 v gain selection terminal voltage high gain vg 0 - 0.4 v low gain vdd - 0.25 vdd vdd + 0.25 v clock pulse voltage high level v(clk) vdd - 0.25 vdd vdd + 0.25 v low level 0 - 0.4 v start pulse voltage high level v(st) vdd - 0.25 vdd vdd + 0.25 v low level 0 - 0.4 v recommended terminal voltage (ta=25 c) parameter symbol min. typ. max. unit clock pulse frequency f(clk) 100 - 800 khz video data rate vr - f(clk)/4 - khz current consumption vdd=5 v i -58 ma vdd=3.3 v - 4.5 7 electrical characteristics [ta=25 c, vdd=5 v, v(clk)=v(st)=5 v] parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm dark output voltage * 3 vdd=5 v high gain vd - 0.8 8 mv low gain - 0.4 4 vdd=3.3 v high gain - 0.5 5 low gain - 0.25 2.5 saturation output voltage vdd=5 v vsat 2.6 3.2 - v vdd=3.3 v 1.4 2.0 - readout noise high gain nr - 1.4 2.2 mv rms low gain - 0.7 1.1 output offset voltage vo 0.2 0.4 0.6 v photoresponse nonuniformity * 4 * 5 prnu - - 8.5 % * 3: integration time=10 ms * 4: photoresponse nonuniformity (prnu) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. prnu is measured using 1022 pixels excluding the pixels at both ends, and is de ned as follows: prnu= ? x/x 100 (%) x: average output of 1022 pixels excluding the pixels at both ends, ? x: difference between x and maximum or minimum output * 5: measured with a tungsten lamp of 2856 k electrical and optical characteristics [ta=25 c, f(clk)=800 khz, vdd=5 v: v(clk)=v(st)=5 v, vdd=3.3 v: v(clk)=v(st)=3.3 v] block diagram timing generator 12345 1023 1024 photodiode array shift register address switch charge amp clamp circuit clk st trig gnd vdd eos vg video 5 3 2 7 6 1 4 8 kmpdc0165ed
cmos linear image sensor s10226-10 3 dark output voltage vs. temperature (typical example) current consumption vs. temperature (typical example) -40 -20 20 040 60 80 100 temperature (c) 0.001 0.01 0.1 1 10 100 dark output voltage (mv) (ts=10 ms) low gain high gain high gain low gain vdd=5 v vdd=3.3 v kmpdb0259eb -40 -20 20 040 60 80 100 temperature (c) current consumption (ma) 2.5 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 (dark state) low gain low gain vdd=5 v vdd=3.3 v high gain high gain kmpdb0260eb spectral response (typical example) 400 500 600 700 900 800 1000 1100 1200 wavelength (nm) 0 20 40 60 80 100 relative sensitivity (%) (ta=25 c) kmpdb0417ea
cmos linear image sensor s10226-10 4 timing chart clk st video trig eos clk st video 1/f(clk) tr(clk) tf(clk) 1/f(clk) tr(st) tf(st) tvd tpi(st), integration time parameter symbol min. typ. max. unit start pulse interval tpi(st) 4104/f(clk) - - s start pulse rise and fall times tr(st), tf(st) 0 20 30 ns clock pulse duty ratio - 40 50 60 % clock pulse rise and fall times tr(clk), tf(clk) 0 20 30 ns video delay time * 6 tvd 10 20 30 ns * 6: ta=25 c, vdd=5 v, v(clk)=v(st)=5 v note: the clk pulse should be set from high to low just once when the st pulse is low. the internal shift register starts operating a t this timing. the storage time is determined by the start pulse intervals. however, since the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differ s depending on each pixel. in addition, the next start pulse cannot be input until signal readout from all pixels is completed. kmpdb0164ec
cmos linear image sensor s10226-10 5 dimensional outline (unit: mm) photosensitive area 7.9872 0.125 2.4 0.8 0.2 1024 ch 1.6 0.2 (0.9) 0.3 0.15 1.44 9.1 3.9936 0.5564 0.2 1.9 1.9 3.4 silicone resin glass epoxy photosensitive surface electrode (8 ) ?0.5 index mark 1 ch tolerance unless otherwise noted: 0.1 top bottom [top view] [side view] [bottom view] direction on scan kmpda0315eb pin no. name i/o description 1 vg i gain selection; low gain: vdd or open, high gain: gnd 2 gnd - ground 3 trig o trigger: timing signal output for a/d converter 4 clk i clock pulse (pulse for synchronizing the internally generated pulses that control sensor operation frequency) 5sti start pulse (pulse for initializing the internally generated pulses that set the timing to start reading pixel signals) 6 eos o end of scan (shift register end-of-scan signal pulse generated after reading signals from all pixels) 7 vdd i power supply voltage 8 video o video signal output pin connections 1.9 1.9 3.4 (8 ) ?0.7 1.44 recommended land pattern (unit: mm) kmpdc0248eb
cmos linear image sensor s10226-10 6 kmpdc0433ea 4.0 0.1 7.5 0.1 1.75 0.1 9.45 0.1 2.0 0.1 8.0 0.1 1.89 0.1 0.32 0.05 2.75 0.1 ? 1.5 -0 16.0 -0.1 +0.3 +0.25 ?1.5 -0 +0.1 reel feed direction 1 ch packing uantity 2000 pcs/reel packing type reel and desiccant in moisture-proof packing (vaccum-sealed) embossed tape (unit: mm, material: polycarbonete resin, conductive) standard packing speci cations reel (conforms to jeita et-7200) dimensions hub diameter tape width material electrostatic characteristic 330 mm 100 mm 16 mm ppe conductive appearance inspection standards parameter test criterion inspection method foreign matter on photosensitive area 10 m max. automated camera
cmos linear image sensor s10226-10 7 ? this product supports lead-free soldering. after unpacking, store it in an environment at a temperature of 30 c or less and a humidity of 60% or less, and perform soldering within 4 weeks. ? the effect that the product receives during re ow soldering varies depending on the circuit board and re ow oven that are used. before actual re ow soldering, check for any problems by tesitng out the re ow soldering methods in advance. ? when three or more months have passed or if the packing bag has not been stored in an environment described above, perform baking. for the baking method, see the related information ?resin sealed type cmos linear image sensor / precautions.? time 300 c preheating 60 to 120 s soldering 60 to 150 s peak temperature 260 c max. 217 c 200 c 150 c peak temperature - 5 c 30 s max. 25 c to peak temperature 8 m max. heating 3 c/s max. cooling 6 c/s max. temperature kmpdb0405ea recommended temperature pro le for re ow soldering (typical example) precautions (1) electrostatic countermeasures this device has a built-in protection circuit as a safeguar d against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. protect this device from surge voltages which might be caused by peripheral equipment. (2) package handling the photosensitive area of this device is sealed and protected by transparent resin. when compared to a glass faceplate, the su rface of transparent resin may be less uniform and is more likely to be scratched. be very careful when handling this device and also when designing the optical systems. dust or grime on the light input window might cause nonuniform sensitivity. to remove dust or grime, blow it off with compresse d air. (3) surface protective tape protective tape is af xed to the surface of this product to protect the photosensi tive area. after assembling the product, remove the tape before use. (4) operating and storage environments handle the device within the temperature range speci ed in the absolute maximum ratings. operating or storing the device at an ex- cessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) uv exposure this product is not designed to prevent deterioration of characteristics caused by uv exposure, so do not expose it to uv light .
cat. no. kmpd1151e01 jul. 2014 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of july, 2014. cmos linear image sensor s10226-10 8 related information precautions ? notice ? image sensor / precautions ? resin-sealed cmos linear image sensors / precautions www.hamamatsu.com/sp/ssd/doc_en.html
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